Accurate defect recombination parameters: What are the limitations of current analyses?
Date
2018
Authors
Rougieux, Fiacre E
Sun, Ryan
Zhu, Yan
Macdonald, Daniel
Journal Title
Journal ISSN
Volume Title
Publisher
IEEE
Abstract
A key strategy for further reducing the cost of solar electricity is through the development of very-high efficiency silicon solar cells (>27%). The challenge in achieving this goal lies in overcoming limitations imposed by the electronic quality of the silicon wafers themselves. To overcome this challenge, there is an urgent need for a refined understanding of defects limiting the electronic quality of silicon wafers. This paper provides a nuanced and detailed picture what constitutes accurate recombination parameters for defects in silicon. It outlines three widespread issues in existing measurements of recombination parameters. It enables robust simulation of the lifetime in silicon for solar cell applications.
Description
Keywords
Recombination, multivalent, defect, flaws, Deep Level Transient Spectroscopy, Temperature and Injection Dependent Lifetime Spectroscopy
Citation
Collections
Source
2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC
Type
Conference paper
Book Title
Entity type
Access Statement
License Rights
Restricted until
2099-12-31