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Characterization of laser-doped localized p-n junctions for high efficiency silicon solar cells

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dc.contributor.authorFell, Andreas
dc.contributor.authorSurve, Sachin
dc.contributor.authorFranklin, Evan
dc.contributor.authorWeber, Klaus
dc.date.accessioned2015-12-13T22:16:17Z
dc.date.issued2014
dc.date.updated2015-12-11T07:24:41Z
dc.description.abstractTo further increase the efficiency of industrial crystalline silicon solar cells, a point-contact solar cell concept with localized p-n junctions is considered a promising candidate if implemented by a low cost processing technique like laser doping. For
dc.identifier.issn0018-9383
dc.identifier.urihttp://hdl.handle.net/1885/70783
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE Inc)
dc.sourceIEEE Transactions on Electron Devices
dc.titleCharacterization of laser-doped localized p-n junctions for high efficiency silicon solar cells
dc.typeJournal article
local.bibliographicCitation.issue6
local.bibliographicCitation.lastpage1949
local.bibliographicCitation.startpage1943
local.contributor.affiliationFell, Andreas, College of Engineering and Computer Science, ANU
local.contributor.affiliationSurve, Sachin, College of Engineering and Computer Science, ANU
local.contributor.affiliationFranklin, Evan, College of Engineering and Computer Science, ANU
local.contributor.affiliationWeber, Klaus, College of Engineering and Computer Science, ANU
local.contributor.authoruidFell, Andreas, u5076423
local.contributor.authoruidSurve, Sachin, u3860297
local.contributor.authoruidFranklin, Evan, u4038737
local.contributor.authoruidWeber, Klaus, u9116880
local.description.embargo2037-12-31
local.description.notesImported from ARIES
local.identifier.absfor090600 - ELECTRICAL AND ELECTRONIC ENGINEERING
local.identifier.ariespublicationU3488905xPUB2414
local.identifier.citationvolume61
local.identifier.doi10.1109/TED.2014.2318714
local.identifier.scopusID2-s2.0-84901343603
local.identifier.thomsonID000338026200050
local.type.statusPublished Version

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