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Characterization of laser-doped localized p-n junctions for high efficiency silicon solar cells

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Date

2014

Authors

Fell, Andreas
Surve, Sachin
Franklin, Evan
Weber, Klaus

Journal Title

Journal ISSN

Volume Title

Publisher

Institute of Electrical and Electronics Engineers (IEEE Inc)

Abstract

To further increase the efficiency of industrial crystalline silicon solar cells, a point-contact solar cell concept with localized p-n junctions is considered a promising candidate if implemented by a low cost processing technique like laser doping. For

Description

Keywords

Citation

URI

http://hdl.handle.net/1885/70783

Collections

ANU Research Publications

Source

IEEE Transactions on Electron Devices

Type

Journal article

Book Title

Entity type

Access Statement

License Rights

DOI

10.1109/TED.2014.2318714

Restricted until

2037-12-31

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Description
01_Fell_Characterization_of_2014.pdf (2.21 MB)

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