Characterization of laser-doped localized p-n junctions for high efficiency silicon solar cells
Date
2014
Authors
Fell, Andreas
Surve, Sachin
Franklin, Evan
Weber, Klaus
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Institute of Electrical and Electronics Engineers (IEEE Inc)
Abstract
To further increase the efficiency of industrial crystalline silicon solar cells, a point-contact solar cell concept with localized p-n junctions is considered a promising candidate if implemented by a low cost processing technique like laser doping. For
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IEEE Transactions on Electron Devices
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Journal article
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2037-12-31
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