Enhanced vertical light extraction from ultrathin amorphous Si-Si 3N4 multilayers with photonic crystal patterns
Date
2009
Authors
Ren, Fang-Fang
Yu, M.B.
Ye, Jiandong
Chen, Q
Lo, G.Q.
Kwong, D.L.
Journal Title
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Volume Title
Publisher
Institute of Electrical and Electronics Engineers (IEEE Inc)
Abstract
We have investigated the significant enhancement of light extraction from amorphous Si-Si3N4 multiple-quantum-well structures, in which two-dimensional hexagonal-lattice air-hole photonic crystals (PCs) were integrated. The vertical spectral integrated intensity of light emission around 674 nm was enhanced up to ∼ 1.24-2.1 times due to strong coupling to the inherent lesaky modes or radiation modes near Γ point of PC's band structure. The experimental observations also suggested that coupling to leaky modes should be more beneficial for light extraction enhancement.
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Keywords
Keywords: Amorphous Si; Experimental observation; Integrated intensities; Leaky modes; Light extraction; Multiple-quantum-well structures; Radiation mode; Strong coupling; Ultra-thin; Amorphous silicon; Microcomputers; Photoluminescence; Semiconductor device struct Light extraction; Photoluminescence (PL); Photonic crystal (PC)
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Source
IEEE Photonics Technology Letters
Type
Journal article
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Restricted until
2037-12-31
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