Enhanced vertical light extraction from ultrathin amorphous Si-Si 3N4 multilayers with photonic crystal patterns

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dc.contributor.authorRen, Fang-Fang
dc.contributor.authorYu, M.B.
dc.contributor.authorYe, Jiandong
dc.contributor.authorChen, Q
dc.contributor.authorLo, G.Q.
dc.contributor.authorKwong, D.L.
dc.date.accessioned2015-12-13T22:48:39Z
dc.date.issued2009
dc.date.updated2016-02-24T09:42:19Z
dc.description.abstractWe have investigated the significant enhancement of light extraction from amorphous Si-Si3N4 multiple-quantum-well structures, in which two-dimensional hexagonal-lattice air-hole photonic crystals (PCs) were integrated. The vertical spectral integrated intensity of light emission around 674 nm was enhanced up to ∼ 1.24-2.1 times due to strong coupling to the inherent lesaky modes or radiation modes near Γ point of PC's band structure. The experimental observations also suggested that coupling to leaky modes should be more beneficial for light extraction enhancement.
dc.identifier.issn1041-1135
dc.identifier.urihttp://hdl.handle.net/1885/80179
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE Inc)
dc.sourceIEEE Photonics Technology Letters
dc.subjectKeywords: Amorphous Si; Experimental observation; Integrated intensities; Leaky modes; Light extraction; Multiple-quantum-well structures; Radiation mode; Strong coupling; Ultra-thin; Amorphous silicon; Microcomputers; Photoluminescence; Semiconductor device struct Light extraction; Photoluminescence (PL); Photonic crystal (PC)
dc.titleEnhanced vertical light extraction from ultrathin amorphous Si-Si 3N4 multilayers with photonic crystal patterns
dc.typeJournal article
local.bibliographicCitation.issue2
local.bibliographicCitation.lastpage93
local.bibliographicCitation.startpage91
local.contributor.affiliationRen, Fang-Fang, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationYu, M.B., Institute of Microelectronics
local.contributor.affiliationYe, Jiandong, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationChen, Q, Institute of Microelectronics, A STAR
local.contributor.affiliationLo, G.Q., Institute of Microelectronics, A STAR
local.contributor.affiliationKwong, D.L., Institute of Microelectronics, A STAR
local.contributor.authoremailu5401017@anu.edu.au
local.contributor.authoruidRen, Fang-Fang, u5401017
local.contributor.authoruidYe, Jiandong, u4920827
local.description.embargo2037-12-31
local.description.notesImported from ARIES
local.identifier.absfor020500 - OPTICAL PHYSICS
local.identifier.absseo970102 - Expanding Knowledge in the Physical Sciences
local.identifier.ariespublicationf5625xPUB8484
local.identifier.citationvolume21
local.identifier.doi10.1109/LPT.2008.2008730
local.identifier.scopusID2-s2.0-70349737104
local.identifier.uidSubmittedByf5625
local.type.statusPublished Version

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