Comparison of proton and arsenic implantation-induced intermixing in InGaAsP/InGaAs/InP and nAlGaAs/InGaAs/InP quantum wells

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dc.contributor.authorDu, Sien_AU
dc.contributor.authorFu, Lanen_AU
dc.contributor.authorJagadish, Chennupatien_AU
dc.contributor.authorTan, Hark Hoeen_AU
dc.coverage.spatialMelbourne Australia
dc.date.accessioned2015-12-10T21:56:26Z
dc.date.createdFebruary 25-29 2008
dc.date.issued2008
dc.date.updated2016-02-24T10:00:20Z
dc.description.abstractIn this work, we studied the proton and arsenic ion implantation-induced intermixing in InGaAsP/InGaAs and InAlGaAs/InGaAs quantum wells. The results were compared and discussed based on the defect formation and evolution process under the different implantation conditions and QW barrier materials.
dc.identifier.isbn1424415047
dc.identifier.urihttp://hdl.handle.net/1885/39423
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE Inc)
dc.relation.ispartofseriesInternational Conference on Nanoscience and Nanotechnology (ICONN 2008)
dc.sourceProceedings of the 2008 International Conference on Nanoscience and Nanotechnology
dc.source.urihttp://www.ausnano.net/iconn2008/
dc.subjectKeywords: Arsenic; Ion bombardment; Ion implantation; Mixing; Nanoscience; Nanotechnology; Protons; Semiconductor quantum wires; Wells; Arsenic implantations; Barrier materials; Defect formations; Evolution processes; Implantation conditions; Interdiffusion; Quantu Interdiffusion; Ion implantation; Photoluminescence; Quantum well intermixing
dc.titleComparison of proton and arsenic implantation-induced intermixing in InGaAsP/InGaAs/InP and nAlGaAs/InGaAs/InP quantum wells
dc.typeConference paper
local.bibliographicCitation.lastpage35
local.bibliographicCitation.startpage32
local.contributor.affiliationDu, Si, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationFu, Lan, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationTan, Hoe Hark, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationJagadish, Chennupati, College of Physical and Mathematical Sciences, ANU
local.contributor.authoremailu9715386@anu.edu.au
local.contributor.authoruidDu, Si, u4276554
local.contributor.authoruidFu, Lan, u9715386
local.contributor.authoruidTan, Hoe Hark, u9302338
local.contributor.authoruidJagadish, Chennupati, u9212349
local.description.embargo2037-12-31
local.description.notesImported from ARIES
local.description.refereedYes
local.identifier.absfor020499 - Condensed Matter Physics not elsewhere classified
local.identifier.ariespublicationu3488905xPUB177
local.identifier.doi10.1109/ICONN.2008.4639238
local.identifier.scopusID2-s2.0-56349116774
local.identifier.uidSubmittedByu3488905
local.type.statusPublished Version

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