Comparison of proton and arsenic implantation-induced intermixing in InGaAsP/InGaAs/InP and nAlGaAs/InGaAs/InP quantum wells
Date
2008
Authors
Du, Si
Fu, Lan
Jagadish, Chennupati
Tan, Hark Hoe
Journal Title
Journal ISSN
Volume Title
Publisher
Institute of Electrical and Electronics Engineers (IEEE Inc)
Abstract
In this work, we studied the proton and arsenic ion implantation-induced intermixing in InGaAsP/InGaAs and InAlGaAs/InGaAs quantum wells. The results were compared and discussed based on the defect formation and evolution process under the different implantation conditions and QW barrier materials.
Description
Keywords
Keywords: Arsenic; Ion bombardment; Ion implantation; Mixing; Nanoscience; Nanotechnology; Protons; Semiconductor quantum wires; Wells; Arsenic implantations; Barrier materials; Defect formations; Evolution processes; Implantation conditions; Interdiffusion; Quantu Interdiffusion; Ion implantation; Photoluminescence; Quantum well intermixing
Citation
Collections
Source
Proceedings of the 2008 International Conference on Nanoscience and Nanotechnology
Type
Conference paper
Book Title
Entity type
Access Statement
License Rights
Restricted until
2037-12-31
Downloads
File
Description