Comparison of proton and arsenic implantation-induced intermixing in InGaAsP/InGaAs/InP and nAlGaAs/InGaAs/InP quantum wells

Date

2008

Authors

Du, Si
Fu, Lan
Jagadish, Chennupati
Tan, Hark Hoe

Journal Title

Journal ISSN

Volume Title

Publisher

Institute of Electrical and Electronics Engineers (IEEE Inc)

Abstract

In this work, we studied the proton and arsenic ion implantation-induced intermixing in InGaAsP/InGaAs and InAlGaAs/InGaAs quantum wells. The results were compared and discussed based on the defect formation and evolution process under the different implantation conditions and QW barrier materials.

Description

Keywords

Keywords: Arsenic; Ion bombardment; Ion implantation; Mixing; Nanoscience; Nanotechnology; Protons; Semiconductor quantum wires; Wells; Arsenic implantations; Barrier materials; Defect formations; Evolution processes; Implantation conditions; Interdiffusion; Quantu Interdiffusion; Ion implantation; Photoluminescence; Quantum well intermixing

Citation

URI

http://hdl.handle.net/1885/39423

Collections

ANU Research Publications

Source

Proceedings of the 2008 International Conference on Nanoscience and Nanotechnology

Type

Conference paper

Book Title

Entity type

Access Statement

License Rights

DOI

10.1109/ICONN.2008.4639238

Restricted until

2037-12-31

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Description
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