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Nearly intrinsic exciton lifetimes in single twin-free GaAs/AlGaAs core-shell nanowire heterostructures

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dc.contributor.authorPerera, S.en_AU
dc.contributor.authorFickenscher, M. A.en_AU
dc.contributor.authorJackson, H. E.en_AU
dc.contributor.authorSmith, L. M.en_AU
dc.contributor.authorYarrison-Rice, J. M.en_AU
dc.contributor.authorJoyce, H. J.en_AU
dc.contributor.authorGao, Q.en_AU
dc.contributor.authorJagadish, C.en_AU
dc.contributor.authorZhang, X.en_AU
dc.contributor.authorZou, J.en_AU
dc.contributor.authorTan, Hark Hoeen_AU
dc.date.accessioned2015-10-21T03:11:02Z
dc.date.available2015-10-21T03:11:02Z
dc.date.issued2008-08-06
dc.date.updated2015-12-08T10:24:45Z
dc.description.abstractCW and time-resolvedphotoluminescence measurements are used to investigate exciton recombination dynamics in GaAs∕AlGaAsheterostructurenanowires grown with a recently developed technique which minimizes twinning. A thin capping layer is deposited to eliminate the possibility of oxidation of the AlGaAs shell as a source of oxygen defects in the GaAs core. We observe exciton lifetimes of ∼1ns, comparable to high quality two-dimensional double heterostructures. These GaAsnanowires allow one to observe state filling and many-body effects resulting from the increased carrier densities accessible with pulsed laser excitation.
dc.description.sponsorshipS.P., M.A.F., H.E.J., L.M.S., and J.M.Y.-R. acknowledge the financial support of the University of Cincinnati and the National Science Foundation through Grant Nos. EEC/NUE- 0532495, ECCS-0701703, and DMR/MWN-0806700. H.J.J., Q.G., H.H.T., C.J., X.Z., and J.Z. acknowledge support from the Australian Research Council and the Australian National Fabrication Facility.en_AU
dc.format3 pages
dc.identifier.issn0003-6951en_AU
dc.identifier.urihttp://hdl.handle.net/1885/16000
dc.publisherAmerican Institute of Physics (AIP)
dc.rightshttp://www.sherpa.ac.uk/romeo/issn/0003-6951..."Publishers version/PDF may be used on author's personal website, institutional website or institutional repository" from SHERPA/RoMEO site (as at 21/10/15). Copyright 2008 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters and may be found at https://doi.org/10.1063/1.2967877
dc.sourceApplied Physics Letters
dc.subjectKeywords: Crystals; Electric wire; Excitons; Gallium alloys; Heterojunctions; Laser excitation; Oxygen; Pulsed laser applications; Semiconducting gallium; Carrier densities; Core-shell nanowires; Double heterostructures; Exciton lifetimes; Exciton recombinations; G
dc.titleNearly intrinsic exciton lifetimes in single twin-free GaAs/AlGaAs core-shell nanowire heterostructures
dc.typeJournal article
local.bibliographicCitation.issue5en_AU
local.bibliographicCitation.lastpage3
local.bibliographicCitation.startpage053110en_AU
local.contributor.affiliationPerera, S, University of Cincinnati, United States of Americaen_AU
local.contributor.affiliationFickenscher, M A, University of Cincinnati, United States of Americaen_AU
local.contributor.affiliationJackson, Howard E , University of Cincinnati, United States of Americaen_AU
local.contributor.affiliationSmith, Leigh M , University of Cincinnati, United States of Americaen_AU
local.contributor.affiliationYarrison-Rice, Jan M , University of Miami, United States of Americaen_AU
local.contributor.affiliationJoyce, Hannah J, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National Universityen_AU
local.contributor.affiliationGao, Qiang, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National Universityen_AU
local.contributor.affiliationTan, Hoe Hark, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National Universityen_AU
local.contributor.affiliationJagadish, Chennupati, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National Universityen_AU
local.contributor.affiliationZhang, Xin, University of Queensland, Australiaen_AU
local.contributor.affiliationZou, Jin, University of Queensland, Australiaen_AU
local.contributor.authoruidu4006742en_AU
local.description.notesImported from ARIESen_AU
local.identifier.absfor020499en_AU
local.identifier.ariespublicationu3488905xPUB138en_AU
local.identifier.citationvolume93en_AU
local.identifier.doi10.1063/1.2967877en_AU
local.identifier.scopusID2-s2.0-51849161220
local.identifier.thomsonID000258335900070
local.publisher.urlhttps://www.aip.org/en_AU
local.type.statusPublished Versionen_AU

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