Cultural advice

The Australian National University acknowledges, celebrates and pays our respects to the Ngunnawal and Ngambri people of the Canberra region and to all First Nations Australians on whose traditional lands we meet and work, and whose cultures are among the oldest continuing cultures in human history.

Aboriginal and Torres Strait Islander peoples are advised that ANU Library collections may include images, names, voices, and other representations of deceased persons.

Material in the collection may contain terms, language or views that reflect the period in which the item was created and may be considered inappropriate today.

Ion implantation induced defects in ZnO

Simple item page
dc.contributor.authorVines, Lasse
dc.contributor.authorWong-Leung, Jennifer
dc.contributor.authorJagadish, Chennupati
dc.contributor.authorMonakhov, E V
dc.contributor.authorSvensson, Bengt Gunnar
dc.date.accessioned2015-12-10T22:53:23Z
dc.date.issued2012
dc.date.updated2016-02-24T10:19:16Z
dc.description.abstractN-type ZnO single crystals have been implanted with 500 keV O and 1.2 MeV Zn ions using doses between 1×1011 and 2×1012cm-2, and the generation of deep-level defects in the upper part of the band gap has been studied by capacitancevoltage (CV) and deep
dc.identifier.issn0921-4526
dc.identifier.urihttp://hdl.handle.net/1885/59327
dc.publisherElsevier
dc.sourcePhysica B
dc.subjectKeywords: Capacitance voltage; Conduction band edge; Deep defects; Deep energy levels; Deep-level defects; Depth distribution; Generation rate; II-VI semiconductor; Ion radiation effects; Light ion irradiation; Point defects and defect clusters; Sample temperature; Deep energy levels; IIVI semiconductors; Ion radiation effects; Point defects and defect clusters
dc.titleIon implantation induced defects in ZnO
dc.typeJournal article
local.bibliographicCitation.lastpage1484
local.bibliographicCitation.startpage1471
local.contributor.affiliationVines, Lasse, University of Oslo
local.contributor.affiliationWong-Leung, Yin-Yin (Jennifer), College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationJagadish, Chennupati, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationMonakhov, E V, University of Oslo
local.contributor.affiliationSvensson, Bengt Gunnar, University of Oslo
local.contributor.authoruidWong-Leung, Yin-Yin (Jennifer), u9607716
local.contributor.authoruidJagadish, Chennupati, u9212349
local.description.embargo2037-12-31
local.description.notesImported from ARIES
local.identifier.absfor020404 - Electronic and Magnetic Properties of Condensed Matter; Superconductivity
local.identifier.absfor091203 - Compound Semiconductors
local.identifier.absseo970102 - Expanding Knowledge in the Physical Sciences
local.identifier.ariespublicationU3594520xPUB485
local.identifier.citationvolume407
local.identifier.doi10.1016/j.physb.2011.09.066
local.identifier.scopusID2-s2.0-84859157312
local.identifier.thomsonID000303149600007
local.type.statusPublished Version

Downloads

Original bundle

Now showing 1 - 1 of 1
Thumbnail Image
Name:
01_Vines_Ion_implantation_induced_2012.pdf
Size:
378.9 KB
Format:
Adobe Portable Document Format
Download

Collections

ANU Research Publications

DSpace software copyright © 2002-2026 LYRASIS