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Ion implantation induced defects in ZnO

Date

Authors

Vines, Lasse

Wong-Leung, Jennifer

Jagadish, Chennupati

Monakhov, E V

Svensson, Bengt Gunnar

Publisher

Elsevier

Abstract

N-type ZnO single crystals have been implanted with 500 keV O and 1.2 MeV Zn ions using doses between 1×1011 and 2×1012cm-2, and the generation of deep-level defects in the upper part of the band gap has been studied by capacitancevoltage (CV) and deep

Keywords

Keywords: Capacitance voltage; Conduction band edge; Deep defects; Deep energy levels; Deep-level defects; Depth distribution; Generation rate; II-VI semiconductor; Ion radiation effects; Light ion irradiation; Point defects and defect clusters; Sample temperature; Deep energy levels; IIVI semiconductors; Ion radiation effects; Point defects and defect clusters

URI

http://hdl.handle.net/1885/59327

Collections

ANU Research Publications

Source

Physica B

Type

Journal article

DOI

10.1016/j.physb.2011.09.066

Restricted until

2037-12-31

Downloads

File

Description

01_Vines_Ion_implantation_induced_2012.pdf (378.9 KB)