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Growth of Highly Strained InGaAs Quantum Wells on GaAs Substrates - Effect of Growth Rate

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dc.contributor.authorLever McGowan, Penelopeen_AU
dc.contributor.authorJagadish, Chennupatien_AU
dc.contributor.authorTan, Hark Hoeen_AU
dc.date.accessioned2015-12-13T23:08:59Z
dc.date.issued2005
dc.date.updated2015-12-12T08:17:00Z
dc.description.abstractHighly strained InxGa1-xAs (x∼0.5) quantum wells were grown on GaAs substrates at low temperature by metal organic vapor-phase epitaxy. By depositing this material in the kinetically limited growth regime, high-quality pseudomorphic layers were obtained
dc.identifier.issn0022-0248
dc.identifier.urihttp://hdl.handle.net/1885/86810
dc.publisherElsevier
dc.sourceJournal of Crystal Growth
dc.subjectKeywords: Dislocations (crystals); Metallorganic vapor phase epitaxy; Relaxation processes; Semiconductor quantum dots; Semiconductor quantum wells; Superlattices; Biaxial compressive strain; Dot formation; Surface processes; Semiconducting indium gallium arsenide A1. Surface process; A3. MOVPE; A3. Strained QWs; B2. InGaAs/GaAs
dc.titleGrowth of Highly Strained InGaAs Quantum Wells on GaAs Substrates - Effect of Growth Rate
dc.typeJournal article
local.bibliographicCitation.lastpage89
local.bibliographicCitation.startpage85
local.contributor.affiliationTan, Hoe Hark, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationLever McGowan, Penelope, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationJagadish, Chennupati, College of Physical and Mathematical Sciences, ANU
local.contributor.authoruidTan, Hoe Hark, u9302338
local.contributor.authoruidLever McGowan, Penelope, u9915543
local.contributor.authoruidJagadish, Chennupati, u9212349
local.description.embargo2037-12-31
local.description.notesImported from ARIES
local.description.refereedYes
local.identifier.absfor020405 - Soft Condensed Matter
local.identifier.ariespublicationMigratedxPub15824
local.identifier.citationvolume274
local.identifier.doi10.1016/j.jcrysgro.2004.10.031
local.identifier.scopusID2-s2.0-11144337394
local.type.statusPublished Version

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