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Growth of Highly Strained InGaAs Quantum Wells on GaAs Substrates - Effect of Growth Rate

Date

Authors

Lever McGowan, Penelope

Jagadish, Chennupati

Tan, Hark Hoe

Publisher

Elsevier

Abstract

Highly strained InxGa1-xAs (x∼0.5) quantum wells were grown on GaAs substrates at low temperature by metal organic vapor-phase epitaxy. By depositing this material in the kinetically limited growth regime, high-quality pseudomorphic layers were obtained

Keywords

Keywords: Dislocations (crystals); Metallorganic vapor phase epitaxy; Relaxation processes; Semiconductor quantum dots; Semiconductor quantum wells; Superlattices; Biaxial compressive strain; Dot formation; Surface processes; Semiconducting indium gallium arsenide A1. Surface process; A3. MOVPE; A3. Strained QWs; B2. InGaAs/GaAs

URI

http://hdl.handle.net/1885/86810

Collections

ANU Research Publications

Source

Journal of Crystal Growth

Type

Journal article

DOI

10.1016/j.jcrysgro.2004.10.031

Restricted until

2037-12-31

Downloads

File

Description

01_Tan_Growth_of_Highly_Strained_2005.pdf (311.48 KB)

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