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Achieving a narrow size distribution of Au particles at a precise depth in SiO2 by segregation of Au precipitates

dc.contributor.authorCharnvanichborikarn, Supakit
dc.contributor.authorConway, Martin
dc.contributor.authorWong-Leung, Jennifer
dc.contributor.authorWilliams, James
dc.date.accessioned2015-12-07T22:16:13Z
dc.date.issued2009
dc.date.updated2016-02-24T09:52:55Z
dc.description.abstractWe propose a new method of confining Au nanoparticles of a narrow size distribution at a precise depth in an SiO2 matrix. The process involves the formation of nanocavities in silicon by hydrogen implantation and annealing (at 850 °C), followed by Au get
dc.identifier.issn0957-4484
dc.identifier.urihttp://hdl.handle.net/1885/17936
dc.publisherInstitute of Physics Publishing
dc.sourceNanotechnology
dc.subjectKeywords: Au nanoparticles; Au particles; Average diameters; Before and after; Buried oxide layers; Gettering; Hydrogen implantations; matrixes; Nano-cavities; Narrow size distributions; Silicon-on-insulator wafers; Wet oxidations; Hydrogen; Oxidation; Semiconducti
dc.titleAchieving a narrow size distribution of Au particles at a precise depth in SiO2 by segregation of Au precipitates
dc.typeJournal article
local.bibliographicCitation.issue18
local.bibliographicCitation.startpage6
local.contributor.affiliationCharnvanichborikarn, Supakit, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationConway, Martin, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationWong-Leung, Yin-Yin (Jennifer), College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationWilliams, James, College of Physical and Mathematical Sciences, ANU
local.contributor.authoruidCharnvanichborikarn, Supakit, u3251081
local.contributor.authoruidConway, Martin, u9300106
local.contributor.authoruidWong-Leung, Yin-Yin (Jennifer), u9607716
local.contributor.authoruidWilliams, James, u8809701
local.description.embargo2037-12-31
local.description.notesImported from ARIES
local.identifier.absfor020406 - Surfaces and Structural Properties of Condensed Matter
local.identifier.absfor091204 - Elemental Semiconductors
local.identifier.ariespublicationu3251081xPUB3
local.identifier.citationvolume20
local.identifier.doi10.1088/0957-4484/20/18/185603
local.identifier.scopusID2-s2.0-65549154914
local.identifier.thomsonID000265252900018
local.type.statusPublished Version

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