Variable Temperature Hall-effect Measurements in Ion Bombarded InP
| dc.contributor.author | Presenti, G C | |
| dc.contributor.author | Boudinov, H | |
| dc.contributor.author | Carmody, C | |
| dc.contributor.author | Jagadish, Chennupati | |
| dc.date.accessioned | 2015-12-13T22:39:47Z | |
| dc.date.available | 2015-12-13T22:39:47Z | |
| dc.date.issued | 2004 | |
| dc.date.updated | 2015-12-11T09:52:13Z | |
| dc.description.abstract | Fe doped semi-insulating and p-type InP were implanted with P+ ions to produce an excess of phosphorous atoms in the order of 0.1 at.%. Subsequent annealing in Ar ambient in the temperature interval 400-600 °C was performed for 30 s in a rapid thermal an | |
| dc.identifier.issn | 0168-583X | |
| dc.identifier.uri | http://hdl.handle.net/1885/77932 | |
| dc.publisher | Elsevier | |
| dc.source | Nuclear Instruments and Methods in Physics Research: Section B | |
| dc.subject | Keywords: Charge carriers; Electrons; Fermi level; Hall effect; Ion implantation; Photodetectors; Rapid thermal annealing; Semiconducting indium phosphide; Defect energy levels; Negative free carriers; Photocarriers; Ion bombardment Hall effect; InP; Ion bombardment; Mobility; Variable temperature | |
| dc.title | Variable Temperature Hall-effect Measurements in Ion Bombarded InP | |
| dc.type | Journal article | |
| local.bibliographicCitation.lastpage | 390 | |
| local.bibliographicCitation.startpage | 386 | |
| local.contributor.affiliation | Presenti, G C, Instituto de Fisica | |
| local.contributor.affiliation | Boudinov, H, Instituto de Fisica | |
| local.contributor.affiliation | Carmody, C, College of Physical and Mathematical Sciences, ANU | |
| local.contributor.affiliation | Jagadish, Chennupati, College of Physical and Mathematical Sciences, ANU | |
| local.contributor.authoruid | Carmody, C, u9905516 | |
| local.contributor.authoruid | Jagadish, Chennupati, u9212349 | |
| local.description.notes | Imported from ARIES | |
| local.description.refereed | Yes | |
| local.identifier.absfor | 090699 - Electrical and Electronic Engineering not elsewhere classified | |
| local.identifier.ariespublication | MigratedxPub6658 | |
| local.identifier.citationvolume | 218 | |
| local.identifier.doi | 10.1016/j.nimb.2003.12.062 | |
| local.identifier.scopusID | 2-s2.0-2342615542 | |
| local.type.status | Published Version |