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Variable Temperature Hall-effect Measurements in Ion Bombarded InP

Date

Authors

Presenti, G C

Boudinov, H

Carmody, C

Jagadish, Chennupati

Publisher

Elsevier

Abstract

Fe doped semi-insulating and p-type InP were implanted with P+ ions to produce an excess of phosphorous atoms in the order of 0.1 at.%. Subsequent annealing in Ar ambient in the temperature interval 400-600 °C was performed for 30 s in a rapid thermal an

Keywords

Keywords: Charge carriers; Electrons; Fermi level; Hall effect; Ion implantation; Photodetectors; Rapid thermal annealing; Semiconducting indium phosphide; Defect energy levels; Negative free carriers; Photocarriers; Ion bombardment Hall effect; InP; Ion bombardment; Mobility; Variable temperature

URI

http://hdl.handle.net/1885/77932

Collections

ANU Research Publications

Source

Nuclear Instruments and Methods in Physics Research: Section B

Type

Journal article

DOI

10.1016/j.nimb.2003.12.062