Passivation of highly boron doped silicon surfaces by sputtered AlOx and PECVD SiN, a comparison

Simple item page
dc.contributor.authorLi, Tsu-Tsung (Andrew)
dc.contributor.authorCuevas, Andres
dc.contributor.authorTan, Jason
dc.contributor.authorSamundsett, Christian
dc.contributor.authorSaynova, D.
dc.contributor.authorGeerligs, B.
dc.coverage.spatialCanberra Australia
dc.date.accessioned2015-12-10T23:07:53Z
dc.date.createdDecember 12-15 2010
dc.date.issued2010
dc.date.updated2016-02-24T11:02:56Z
dc.description.abstractWe show that boron-diffused emitters can be passivated with AlOx deposited using RF sputtering of an Al target. The surface passivation achieved so far is inferior to that obtained using an optimised PECDV SiN process that includes a chemically grown SiO2 interfacial layer. Nevertheless, the levels of passivation obtained, expressed by emitter recombination current densities of JoE=228-349 fA/cm2 for sheet resistances of 88-210 Ω/□, are already consistent with solar cell with efficiencies in the 20% range.
dc.identifier.isbn9781424473335
dc.identifier.urihttp://hdl.handle.net/1885/63054
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE Inc)
dc.relation.ispartofseriesConference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2010)
dc.source2010 conference on Optoelectronic and Microelectronic Materials and Devices Proceedings
dc.source.urihttp://commad2010.anu.edu.au/
dc.subjectKeywords: Boron-doped silicon; Interfacial layer; Recombination currents; Rf-sputtering; Surface passivation; Boron; Electric resistance; Microelectronics; Silicon nitride; Silicon oxides; Passivation
dc.titlePassivation of highly boron doped silicon surfaces by sputtered AlOx and PECVD SiN, a comparison
dc.typeConference paper
local.bibliographicCitation.lastpage126
local.bibliographicCitation.startpage125
local.contributor.affiliationLi, Tsu-Tsung (Andrew), College of Engineering and Computer Science, ANU
local.contributor.affiliationCuevas, Andres, College of Engineering and Computer Science, ANU
local.contributor.affiliationTan, Jason, College of Engineering and Computer Science, ANU
local.contributor.affiliationSamundsett, Christian, College of Engineering and Computer Science, ANU
local.contributor.affiliationSaynova, D., Energy Research Centre of the Netherlands
local.contributor.affiliationGeerligs, B., Energy Research Centre of the Netherlands
local.contributor.authoremailu9308750@anu.edu.au
local.contributor.authoruidLi, Tsu-Tsung (Andrew), u4436010
local.contributor.authoruidCuevas, Andres, u9308750
local.contributor.authoruidTan, Jason, u4099750
local.contributor.authoruidSamundsett, Christian, u9710649
local.description.embargo2037-12-31
local.description.notesImported from ARIES
local.description.refereedYes
local.identifier.absfor090605 - Photodetectors, Optical Sensors and Solar Cells
local.identifier.absseo850504 - Solar-Photovoltaic Energy
local.identifier.ariespublicationu4334215xPUB764
local.identifier.doi10.1109/COMMAD.2010.5699694
local.identifier.scopusID2-s2.0-79951760212
local.identifier.uidSubmittedByu4334215
local.type.statusPublished Version

Downloads

Original bundle

Now showing 1 - 1 of 1
No Thumbnail Available
Name:
01_Li_Passivation_of_highly_boron_2010.pdf
Size:
492.61 KB
Format:
Adobe Portable Document Format
Download

Collections

ANU Research Publications

DSpace software copyright © 2002-2024 LYRASIS