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Effect of MeV O2+ implantation on the reactive ion etch rate of LiTaO3

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dc.contributor.authorLeech, P W
dc.contributor.authorRidgway, Mark C
dc.date.accessioned2015-12-13T23:34:58Z
dc.date.issued1999
dc.date.updated2015-12-12T09:38:09Z
dc.description.abstractThe etch rate of LiTaO3 in CF4/CHF3 plasmas was increased by approximately 50% by prior implantation with MeV O2+ ions. The etch rate of LiTaO3 was shown to increase with ion dose, indicating an effect of the implant-induced nuclear damage on the etch process. In general terms, the reactive ion etching of LiTaO3 in CF4/CHF3 plasmas has been identified as a process of ion-enhanced chemical etching.
dc.identifier.issn0168-583X
dc.identifier.urihttp://hdl.handle.net/1885/93697
dc.publisherElsevier
dc.sourceNuclear Instruments and Methods in Physics Research: Section B
dc.subjectKeywords: Fluorocarbons; Ion implantation; Oxygen; Plasma etching; Reactive ion etching; Lithium tantalate; Lithium compounds
dc.titleEffect of MeV O2+ implantation on the reactive ion etch rate of LiTaO3
dc.typeJournal article
local.bibliographicCitation.lastpage190
local.bibliographicCitation.startpage187
local.contributor.affiliationLeech, P W, CSIRO
local.contributor.affiliationRidgway, Mark C, College of Physical and Mathematical Sciences, ANU
local.contributor.authoruidRidgway, Mark C, u9001886
local.description.embargo2037-12-31
local.description.notesImported from ARIES
local.description.refereedYes
local.identifier.absfor090699 - Electrical and Electronic Engineering not elsewhere classified
local.identifier.ariespublicationMigratedxPub25089
local.identifier.citationvolumeB159
local.identifier.doi10.1016/S0168-583X(99)00578-9
local.identifier.scopusID2-s2.0-0033339487
local.type.statusPublished Version

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