Effect of MeV O2+ implantation on the reactive ion etch rate of LiTaO3

Abstract

The etch rate of LiTaO3 in CF4/CHF3 plasmas was increased by approximately 50% by prior implantation with MeV O2+ ions. The etch rate of LiTaO3 was shown to increase with ion dose, indicating an effect of the implant-induced nuclear damage on the etch process. In general terms, the reactive ion etching of LiTaO3 in CF4/CHF3 plasmas has been identified as a process of ion-enhanced chemical etching. Show more