The effect of thermal annealing on (In2O3) 0.75(Ga2O3)0.1(ZnO)0.15 thin films with high mobility

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dc.contributor.authorSu, Xueqiong
dc.contributor.authorWang, Li
dc.contributor.authorLu, Yi
dc.contributor.authorGan, Yu-Lin
dc.contributor.authorWang, Rongping
dc.date.accessioned2015-12-13T22:17:17Z
dc.date.issued2014
dc.date.updated2015-12-11T07:32:31Z
dc.description.abstractWe fabricated a series of (In2O3) 0.75(Ga2O3)0.1(ZnO)0.15 thin films using the pulsed laser deposition (PLD) method at room temperature under same oxygen pressure, and annealed these films at different temperatures from RT to 300 °C under vacuum. The eff
dc.identifier.issn0042-207X
dc.identifier.urihttp://hdl.handle.net/1885/71061
dc.publisherPergamon Press
dc.sourceVacuum
dc.titleThe effect of thermal annealing on (In2O3) 0.75(Ga2O3)0.1(ZnO)0.15 thin films with high mobility
dc.typeJournal article
local.bibliographicCitation.lastpage194
local.bibliographicCitation.startpage191
local.contributor.affiliationSu, Xueqiong, Beijing University of Technology
local.contributor.affiliationWang, Li, Beijing University of Technology
local.contributor.affiliationLu, Yi, Beijing University of Technology
local.contributor.affiliationGan, Yu-Lin, Beijing University of Technology
local.contributor.affiliationWang, Rongping, College of Physical and Mathematical Sciences, ANU
local.contributor.authoremailu4219061@anu.edu.au
local.contributor.authoruidWang, Rongping, u4219061
local.description.embargo2037-12-31
local.description.notesImported from ARIES
local.identifier.absfor091200 - MATERIALS ENGINEERING
local.identifier.ariespublicationU3488905xPUB2536
local.identifier.citationvolume107
local.identifier.doi10.1016/j.vacuum.2014.01.025
local.identifier.scopusID2-s2.0-84902381596
local.identifier.thomsonID000338607200035
local.identifier.uidSubmittedByU3488905
local.type.statusPublished Version

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