The effect of thermal annealing on (In2O3) 0.75(Ga2O3)0.1(ZnO)0.15 thin films with high mobility
Date
2014
Authors
Su, Xueqiong
Wang, Li
Lu, Yi
Gan, Yu-Lin
Wang, Rongping
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Pergamon Press
Abstract
We fabricated a series of (In2O3) 0.75(Ga2O3)0.1(ZnO)0.15 thin films using the pulsed laser deposition (PLD) method at room temperature under same oxygen pressure, and annealed these films at different temperatures from RT to 300 °C under vacuum. The eff
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Vacuum
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Journal article
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2037-12-31
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