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Photoluminescence, Deep Level Transient Spectroscopy and Transmission Electron Micrsocopy Measurements on MeV Self-Ion Implanted and Annealed n-type Silicon

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dc.contributor.authorSchmidt, D. C.
dc.contributor.authorSvensson, B
dc.contributor.authorSeibt, M
dc.contributor.authorJagadish, Chennupati
dc.contributor.authorDavies, G
dc.date.accessioned2015-12-08T22:41:47Z
dc.date.issued2000
dc.date.updated2015-12-08T10:30:38Z
dc.description.abstractDeep-level transient spectroscopy (DLTS), photoluminescence (PL), and transmission electron microscopy (TEM) measurements have been made on n-type silicon after implanting with 5.6 MeV Si3+ ions using doses of 109 - 1014 cm-2 and anneals at 525 and 750°C
dc.identifier.issn0021-8979
dc.identifier.urihttp://hdl.handle.net/1885/36802
dc.publisherAmerican Institute of Physics (AIP)
dc.sourceJournal of Applied Physics
dc.titlePhotoluminescence, Deep Level Transient Spectroscopy and Transmission Electron Micrsocopy Measurements on MeV Self-Ion Implanted and Annealed n-type Silicon
dc.typeJournal article
local.bibliographicCitation.lastpage2317
local.bibliographicCitation.startpage2309
local.contributor.affiliationSchmidt, D C, Royal Institute of Technology
local.contributor.affiliationSvensson, B, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationSeibt, M, University of Gottingen
local.contributor.affiliationJagadish, Chennupati, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationDavies, G, King's College London
local.contributor.authoruidSvensson, B, u911190
local.contributor.authoruidJagadish, Chennupati, u9212349
local.description.embargo2037-12-31
local.description.notesImported from ARIES
local.description.refereedYes
local.identifier.absfor020204 - Plasma Physics; Fusion Plasmas; Electrical Discharges
local.identifier.ariespublicationMigratedxPub141
local.identifier.citationvolume88
local.identifier.scopusID2-s2.0-0000292577
local.type.statusPublished Version

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