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Photoluminescence, Deep Level Transient Spectroscopy and Transmission Electron Micrsocopy Measurements on MeV Self-Ion Implanted and Annealed n-type Silicon

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Date

2000

Authors

Schmidt, D. C.
Svensson, B
Seibt, M
Jagadish, Chennupati
Davies, G

Journal Title

Journal ISSN

Volume Title

Publisher

American Institute of Physics (AIP)

Abstract

Deep-level transient spectroscopy (DLTS), photoluminescence (PL), and transmission electron microscopy (TEM) measurements have been made on n-type silicon after implanting with 5.6 MeV Si3+ ions using doses of 109 - 1014 cm-2 and anneals at 525 and 750°C

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Citation

URI

http://hdl.handle.net/1885/36802

Collections

ANU Research Publications

Source

Journal of Applied Physics

Type

Journal article

Book Title

Entity type

Access Statement

License Rights

DOI

Restricted until

2037-12-31

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01_Schmidt_Photoluminescence,_Deep_Level_2000.pdf (636.85 KB)

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