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Process control of reactive sputter deposition of AlO x and improved surface passivation of crystalline silicon

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dc.contributor.authorZhang, Xinyu
dc.contributor.authorCuevas, Andres
dc.contributor.authorThomson, Andrew
dc.date.accessioned2015-12-10T23:35:28Z
dc.date.issued2013
dc.date.updated2016-02-24T08:55:05Z
dc.description.abstractIn this paper, we investigate the relationship between the deposition-process parameters of reactively sputtered aluminium oxide films and the passivation of silicon surfaces. A method of tuning the deposition process has been established that results in
dc.identifier.issn2156-3381
dc.identifier.urihttp://hdl.handle.net/1885/69866
dc.publisherIEEE Electron Devices Society
dc.sourceIEEE Journal of Photovoltaics
dc.subjectKeywords: Aluminium oxide; Crystalline silicons; Deposition pressures; Deposition process; Effective lifetime; Film characterizations; Low Power; Reactive sputter deposition; Silicon surfaces; Spectroscopy measurements; Sputtering target; Surface passivation; Surfa Photovoltaic cells; process control; silicon; sputtering; surfaces
dc.titleProcess control of reactive sputter deposition of AlO x and improved surface passivation of crystalline silicon
dc.typeJournal article
local.bibliographicCitation.issue1
local.bibliographicCitation.lastpage188
local.bibliographicCitation.startpage183
local.contributor.affiliationZhang, Xinyu, College of Engineering and Computer Science, ANU
local.contributor.affiliationCuevas, Andres, College of Engineering and Computer Science, ANU
local.contributor.affiliationThomson, Andrew, College of Engineering and Computer Science, ANU
local.contributor.authoruidZhang, Xinyu, u5033752
local.contributor.authoruidCuevas, Andres, u9308750
local.contributor.authoruidThomson, Andrew, u4323527
local.description.embargo2037-12-31
local.description.notesImported from ARIES
local.identifier.absfor090600 - ELECTRICAL AND ELECTRONIC ENGINEERING
local.identifier.absfor091200 - MATERIALS ENGINEERING
local.identifier.ariespublicationf5625xPUB2144
local.identifier.citationvolume3
local.identifier.doi10.1109/JPHOTOV.2012.2214765
local.identifier.scopusID2-s2.0-84871725573
local.identifier.thomsonID000318434000029
local.type.statusPublished Version

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