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Electrical Isolation of n-type InP by Ion Bombardment: Dose Dependence and Thermal Stability

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dc.contributor.authorBoudinov, H
dc.contributor.authorde Souza, J P
dc.contributor.authorJagadish, Chennupati
dc.date.accessioned2015-12-10T23:30:43Z
dc.date.issued2001
dc.date.updated2015-12-10T11:09:13Z
dc.description.abstractThe increasing of the sheet resistance (Rs) of n-type conductive InP layers during proton irradiation and the stability of the formed isolation during post-irradiation annealing were investigated. It was found that the threshold dose (Dth) to convert the
dc.identifier.issn0168-583X
dc.identifier.urihttp://hdl.handle.net/1885/68308
dc.publisherElsevier
dc.sourceNuclear Instruments and Methods in Physics Research: Section B
dc.subjectKeywords: Annealing; Carrier concentration; Crystal defects; Ion bombardment; Proton irradiation; Semiconducting indium phosphide; Thermodynamic stability; Electrical isolation; Semiconducting films InP; Ion bombardment; Isolation; Sheet resistance; Thermal stability
dc.titleElectrical Isolation of n-type InP by Ion Bombardment: Dose Dependence and Thermal Stability
dc.typeJournal article
local.bibliographicCitation.lastpage240
local.bibliographicCitation.startpage235
local.contributor.affiliationBoudinov, H, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationde Souza, J P, Universidade Federal do Rio Grande do Sul
local.contributor.affiliationJagadish, Chennupati, College of Physical and Mathematical Sciences, ANU
local.contributor.authoruidBoudinov, H, v000799
local.contributor.authoruidJagadish, Chennupati, u9212349
local.description.embargo2037-12-31
local.description.notesImported from ARIES
local.description.refereedYes
local.identifier.absfor090699 - Electrical and Electronic Engineering not elsewhere classified
local.identifier.ariespublicationMigratedxPub1677
local.identifier.citationvolume175-177
local.identifier.doi10.1016/S0168-583X(00)00529-2
local.identifier.scopusID2-s2.0-17044455388
local.type.statusPublished Version

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