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Electrical Isolation of n-type InP by Ion Bombardment: Dose Dependence and Thermal Stability

Date

Authors

Boudinov, H

de Souza, J P

Jagadish, Chennupati

Publisher

Elsevier

Abstract

The increasing of the sheet resistance (Rs) of n-type conductive InP layers during proton irradiation and the stability of the formed isolation during post-irradiation annealing were investigated. It was found that the threshold dose (Dth) to convert the

Keywords

Keywords: Annealing; Carrier concentration; Crystal defects; Ion bombardment; Proton irradiation; Semiconducting indium phosphide; Thermodynamic stability; Electrical isolation; Semiconducting films InP; Ion bombardment; Isolation; Sheet resistance; Thermal stability

URI

http://hdl.handle.net/1885/68308

Collections

ANU Research Publications

Source

Nuclear Instruments and Methods in Physics Research: Section B

Type

Journal article

DOI

10.1016/S0168-583X(00)00529-2

Restricted until

2037-12-31

Downloads

File

Description

01_Boudinov_Electrical_Isolation_of_n-type_2001.pdf (212.53 KB)

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