Application of junction capacitance measurements to the characterization of solar cells

Date

2006

Authors

Recart, Federico
Cuevas, Andres

Journal Title

Journal ISSN

Volume Title

Publisher

Institute of Electrical and Electronics Engineers (IEEE Inc)

Abstract

The quasi-static capacitance-voltage (C-V) technique measures the dependence of junction capacitance on the bias voltage by applying a slow, reverse-bias voltage ramp to the solar cell in the dark, using simple circuitry. The resulting C-V curves contain

Description

Keywords

Keywords: Capacitance measurement; Electric conductivity; Electric potential; Electric space charge; Photovoltaic cells; Semiconductor doping; Semiconductor junctions; Substrates; Capacitance-voltage (C-V); Emitter doping; Junction capacitance; Resistivity substrat Capacitance; Photovoltaic cells; Space charge region (SCR)

Citation

Source

IEEE Transactions on Electron Devices

Type

Journal article

Book Title

Entity type

Access Statement

License Rights

Restricted until

2037-12-31
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