Application of junction capacitance measurements to the characterization of solar cells
Date
2006
Authors
Recart, Federico
Cuevas, Andres
Journal Title
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Volume Title
Publisher
Institute of Electrical and Electronics Engineers (IEEE Inc)
Abstract
The quasi-static capacitance-voltage (C-V) technique measures the dependence of junction capacitance on the bias voltage by applying a slow, reverse-bias voltage ramp to the solar cell in the dark, using simple circuitry. The resulting C-V curves contain
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Keywords
Keywords: Capacitance measurement; Electric conductivity; Electric potential; Electric space charge; Photovoltaic cells; Semiconductor doping; Semiconductor junctions; Substrates; Capacitance-voltage (C-V); Emitter doping; Junction capacitance; Resistivity substrat Capacitance; Photovoltaic cells; Space charge region (SCR)
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Source
IEEE Transactions on Electron Devices
Type
Journal article
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2037-12-31
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