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Application of junction capacitance measurements to the characterization of solar cells

Date

Authors

Recart, Federico

Cuevas, Andres

Publisher

Institute of Electrical and Electronics Engineers (IEEE Inc)

Abstract

The quasi-static capacitance-voltage (C-V) technique measures the dependence of junction capacitance on the bias voltage by applying a slow, reverse-bias voltage ramp to the solar cell in the dark, using simple circuitry. The resulting C-V curves contain

Keywords

Keywords: Capacitance measurement; Electric conductivity; Electric potential; Electric space charge; Photovoltaic cells; Semiconductor doping; Semiconductor junctions; Substrates; Capacitance-voltage (C-V); Emitter doping; Junction capacitance; Resistivity substrat Capacitance; Photovoltaic cells; Space charge region (SCR)

URI

http://hdl.handle.net/1885/18040

Collections

ANU Research Publications

Source

IEEE Transactions on Electron Devices

Type

Journal article

DOI

10.1109/TED.2006.870846

Restricted until

2037-12-31

Downloads

File

Description

01_Recart_Application_of_junction_2006.pdf (366.41 KB)