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Silicon / Silicon oxide / LPCVD Silicon nitride stacks: The effect of oxide thickness on bulk damage and surface passivation

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dc.contributor.authorJin, Haoen_AU
dc.contributor.authorWeber, K. Jen_AU
dc.contributor.authorBlakers, Andrewen_AU
dc.coverage.spatialBarcelonaen_AU
dc.coverage.temporalJun-05en_AU
dc.date.accessioned2005-07-20en_US
dc.date.accessioned2006-03-27T02:10:36Zen_US
dc.date.accessioned2011-01-05T08:26:42Z
dc.date.available2006-03-27T02:10:36Zen_US
dc.date.available2011-01-05T08:26:42Z
dc.date.created2005en_AU
dc.description.abstractSilicon / thermally grown silicon dioxide / LPCVD silicon nitride stacks were formed to investigate the influence of the oxide thickness on silicon bulk and surface properties after thermal processing. With no oxide, the LPCVD silicon nitride layer causes serious irreversible bulk damage to silicon wafers after a high temperature treatment. A thin oxide layer (~10nm) helps to substantially reduce the damage. A thick oxide (more than 50nm) can help completely eliminate the bulk damage. An increase of surface states was indicated by an increase of emitter the saturation current density for the stacks with thin oxide layers after high temperature treatments. Even after a re-growth of thick oxide layer and forming gas anneal, the stacks previously without oxide layer shows a much higher emitter saturation current value, which indicates silicon nitride causes a serious Si-SiO2 interface damage. Keywords: LPCVD, Emitter saturation current, Effective lifetimeen_AU
dc.format.extent97690 bytesen_AU
dc.format.extent353 bytesen_AU
dc.format.mimetypeapplication/pdfen_AU
dc.identifier.urihttp://hdl.handle.net/1885/43097
dc.language.isoen_AUen_AU
dc.relation.ispartofseries20th EC PV Solar Energy Conferenceen_AU
dc.subjecteffective lifetimeen_AU
dc.subjectemitter saturation currenten_AU
dc.titleSilicon / Silicon oxide / LPCVD Silicon nitride stacks: The effect of oxide thickness on bulk damage and surface passivationen_AU
dc.typeConference paperen_AU
local.description.refereednoen_US
local.identifier.citationyear2005en_US
local.identifier.eprintid3168en_US
local.rights.ispublishednoen_US

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