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Effect of high temperature post-annealing on sidewalls of GaAs NWs grown by MOCVD

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Date

2010

Authors

Guo, YaNan
Zou, Jin
Joyce, Hannah J
Gao, Qiang
Jagadish, Chennupati
Tan, Hark Hoe

Journal Title

Journal ISSN

Volume Title

Publisher

IEEE

Abstract

The sidewall facets of GaAs nanowires (NWs) were studied. It has been found that the sidewalls of GaAs NWs grown at 450 °C are {112} facets. However, the sidewalls of GaAs NWs start to become {110} during the postannealing at 650 °C for 30 min.

Description

Keywords

Keywords: GaAs; High temperature; MOCVD; Post annealing; Gallium arsenide; Microelectronics; Nanowires; Semiconducting gallium; Gallium alloys

Citation

URI

http://hdl.handle.net/1885/83675

Collections

ANU Research Publications

Source

Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD

Type

Conference paper

Book Title

Entity type

Access Statement

License Rights

DOI

10.1109/COMMAD.2010.5699774

Restricted until

2037-12-31

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01_Guo_Effect_of_high_temperature_2010.pdf (609.96 KB)

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