Effect of high temperature post-annealing on sidewalls of GaAs NWs grown by MOCVD
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Guo, YaNan
Zou, Jin
Joyce, Hannah J
Gao, Qiang
Jagadish, Chennupati
Tan, Hark Hoe
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IEEE
Abstract
The sidewall facets of GaAs nanowires (NWs) were studied. It has been found that the sidewalls of GaAs NWs grown at 450 °C are {112} facets. However, the sidewalls of GaAs NWs start to become {110} during the postannealing at 650 °C for 30 min.
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Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD
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2037-12-31
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