Effect of high temperature post-annealing on sidewalls of GaAs NWs grown by MOCVD

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dc.contributor.authorGuo, YaNanen_AU
dc.contributor.authorZou, Jinen_AU
dc.contributor.authorJoyce, Hannah Jen_AU
dc.contributor.authorGao, Qiangen_AU
dc.contributor.authorJagadish, Chennupatien_AU
dc.contributor.authorTan, Hark Hoeen_AU
dc.coverage.spatialCanberra, ACT
dc.date.accessioned2015-12-13T22:59:14Z
dc.date.createdDecember 12-15 2010
dc.date.issued2010
dc.date.updated2016-02-24T08:39:59Z
dc.description.abstractThe sidewall facets of GaAs nanowires (NWs) were studied. It has been found that the sidewalls of GaAs NWs grown at 450 °C are {112} facets. However, the sidewalls of GaAs NWs start to become {110} during the postannealing at 650 °C for 30 min.
dc.identifier.isbn9781424473335
dc.identifier.urihttp://hdl.handle.net/1885/83675
dc.publisherIEEE
dc.relation.ispartofseries2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010
dc.sourceConference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD
dc.subjectKeywords: GaAs; High temperature; MOCVD; Post annealing; Gallium arsenide; Microelectronics; Nanowires; Semiconducting gallium; Gallium alloys
dc.titleEffect of high temperature post-annealing on sidewalls of GaAs NWs grown by MOCVD
dc.typeConference paper
local.bibliographicCitation.lastpage52
local.bibliographicCitation.startpage51
local.contributor.affiliationGuo, YaNan, University of Queensland
local.contributor.affiliationZou, Jin, University of Queensland
local.contributor.affiliationJoyce, Hannah J, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationGao, Qiang, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationTan, Hoe Hark, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationJagadish, Chennupati, College of Physical and Mathematical Sciences, ANU
local.contributor.authoruidJoyce, Hannah J, u4193607
local.contributor.authoruidGao, Qiang, u4006742
local.contributor.authoruidTan, Hoe Hark, u9302338
local.contributor.authoruidJagadish, Chennupati, u9212349
local.description.embargo2037-12-31
local.description.notesImported from ARIES
local.description.refereedYes
local.identifier.absfor020204 - Plasma Physics; Fusion Plasmas; Electrical Discharges
local.identifier.absfor100700 - NANOTECHNOLOGY
local.identifier.absfor100799 - Nanotechnology not elsewhere classified
local.identifier.absseo970102 - Expanding Knowledge in the Physical Sciences
local.identifier.ariespublicationf5625xPUB11957
local.identifier.ariespublicationU3594520xPUB580
local.identifier.doi10.1109/COMMAD.2010.5699774
local.identifier.scopusID2-s2.0-79951763312
local.type.statusPublished Version

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