Annealing kinetics of vacancy-related defects in low-dose MeV self-ion-implanted n-type silicon

Pellegrino, P; Leveque, P; Lalita, J; Hallen, A; Jagadish, Chennupati; Svensson, Bengt Gunnar

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Annealing kinetics of vacancy-related defects in low-dose MeV self-ion-implanted n-type silicon

Date

2001

Authors

Pellegrino, P

Leveque, P

Lalita, J

Hallen, A

Jagadish, Chennupati

Svensson, Bengt Gunnar

Publisher

American Physical Society

Abstract

Silicon samples of n-type have been implanted at room temperature with 5.6-MeV 28Si ions to a dose of 2 × 108 cm-2 and then annealed at temperatures from 100 to 380 °C. Both isothermal and isochronal treatments were performed and the annealing kinetics

Keywords

Keywords: silicon; article; computer simulation; diffusion; electronics; irradiation; spectroscopy; temperature

URI

http://hdl.handle.net/1885/68471

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ANU Research Publications

Source

Physical Review B

Type

Journal article

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Annealing kinetics of vacancy-related defects in low-dose MeV self-ion-implanted n-type silicon

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