Annealing kinetics of vacancy-related defects in low-dose MeV self-ion-implanted n-type silicon
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Authors
Pellegrino, P
Leveque, P
Lalita, J
Hallen, A
Jagadish, Chennupati
Svensson, Bengt Gunnar
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American Physical Society
Abstract
Silicon samples of n-type have been implanted at room temperature with 5.6-MeV 28Si ions to a dose of 2 × 108 cm-2 and then annealed at temperatures from 100 to 380 °C. Both isothermal and isochronal treatments were performed and the annealing kinetics
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Physical Review B