Annealing kinetics of vacancy-related defects in low-dose MeV self-ion-implanted n-type silicon

dc.contributor.authorPellegrino, P
dc.contributor.authorLeveque, P
dc.contributor.authorLalita, J
dc.contributor.authorHallen, A
dc.contributor.authorJagadish, Chennupati
dc.contributor.authorSvensson, Bengt Gunnar
dc.date.accessioned2015-12-10T23:31:06Z
dc.date.available2015-12-10T23:31:06Z
dc.date.issued2001
dc.date.updated2015-12-10T11:11:33Z
dc.description.abstractSilicon samples of n-type have been implanted at room temperature with 5.6-MeV 28Si ions to a dose of 2 × 108 cm-2 and then annealed at temperatures from 100 to 380 °C. Both isothermal and isochronal treatments were performed and the annealing kinetics
dc.identifier.issn0163-1829
dc.identifier.urihttp://hdl.handle.net/1885/68471
dc.publisherAmerican Physical Society
dc.sourcePhysical Review B
dc.subjectKeywords: silicon; article; computer simulation; diffusion; electronics; irradiation; spectroscopy; temperature
dc.titleAnnealing kinetics of vacancy-related defects in low-dose MeV self-ion-implanted n-type silicon
dc.typeJournal article
local.bibliographicCitation.lastpage10
local.bibliographicCitation.startpage195211/1
local.contributor.affiliationPellegrino, P, Royal Institute of Technology
local.contributor.affiliationLeveque, P, Royal Institute of Technology
local.contributor.affiliationLalita, J, Royal Institute of Technology
local.contributor.affiliationHallen, A, Royal Institute of Technology
local.contributor.affiliationJagadish, Chennupati, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationSvensson, Bengt Gunnar, University of Oslo
local.contributor.authoruidJagadish, Chennupati, u9212349
local.description.notesImported from ARIES
local.description.refereedYes
local.identifier.absfor090699 - Electrical and Electronic Engineering not elsewhere classified
local.identifier.ariespublicationMigratedxPub1724
local.identifier.citationvolume64
local.identifier.scopusID2-s2.0-0035891151
local.type.statusPublished Version

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