Annealing kinetics of vacancy-related defects in low-dose MeV self-ion-implanted n-type silicon
| dc.contributor.author | Pellegrino, P | |
| dc.contributor.author | Leveque, P | |
| dc.contributor.author | Lalita, J | |
| dc.contributor.author | Hallen, A | |
| dc.contributor.author | Jagadish, Chennupati | |
| dc.contributor.author | Svensson, Bengt Gunnar | |
| dc.date.accessioned | 2015-12-10T23:31:06Z | |
| dc.date.available | 2015-12-10T23:31:06Z | |
| dc.date.issued | 2001 | |
| dc.date.updated | 2015-12-10T11:11:33Z | |
| dc.description.abstract | Silicon samples of n-type have been implanted at room temperature with 5.6-MeV 28Si ions to a dose of 2 × 108 cm-2 and then annealed at temperatures from 100 to 380 °C. Both isothermal and isochronal treatments were performed and the annealing kinetics | |
| dc.identifier.issn | 0163-1829 | |
| dc.identifier.uri | http://hdl.handle.net/1885/68471 | |
| dc.publisher | American Physical Society | |
| dc.source | Physical Review B | |
| dc.subject | Keywords: silicon; article; computer simulation; diffusion; electronics; irradiation; spectroscopy; temperature | |
| dc.title | Annealing kinetics of vacancy-related defects in low-dose MeV self-ion-implanted n-type silicon | |
| dc.type | Journal article | |
| local.bibliographicCitation.lastpage | 10 | |
| local.bibliographicCitation.startpage | 195211/1 | |
| local.contributor.affiliation | Pellegrino, P, Royal Institute of Technology | |
| local.contributor.affiliation | Leveque, P, Royal Institute of Technology | |
| local.contributor.affiliation | Lalita, J, Royal Institute of Technology | |
| local.contributor.affiliation | Hallen, A, Royal Institute of Technology | |
| local.contributor.affiliation | Jagadish, Chennupati, College of Physical and Mathematical Sciences, ANU | |
| local.contributor.affiliation | Svensson, Bengt Gunnar, University of Oslo | |
| local.contributor.authoruid | Jagadish, Chennupati, u9212349 | |
| local.description.notes | Imported from ARIES | |
| local.description.refereed | Yes | |
| local.identifier.absfor | 090699 - Electrical and Electronic Engineering not elsewhere classified | |
| local.identifier.ariespublication | MigratedxPub1724 | |
| local.identifier.citationvolume | 64 | |
| local.identifier.scopusID | 2-s2.0-0035891151 | |
| local.type.status | Published Version |