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Hafnium-related photoluminescence in single crystal silicon

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dc.contributor.authorSachdeva, R
dc.contributor.authorIstratov, A A
dc.contributor.authorShan, Wei
dc.contributor.authorDeenapanray, Prakash
dc.contributor.authorWeber, E R
dc.coverage.spatialSan Francisco USA
dc.date.accessioned2015-12-13T22:59:16Z
dc.date.available2015-12-13T22:59:16Z
dc.date.createdMarch 28 2005
dc.date.issued2005
dc.date.updated2015-12-12T07:27:19Z
dc.description.abstractA new photoluminescence (PL) band in the energy range of 700 meV to 950 meV associated with hafnium implanted in silicon is reported. A shift in the position of photoluminescence peaks observed on the samples implanted with two different isotopes of Hf confirms the Hf-related origin of the observed photoluminescence band. Activation of the Hf-optical centers requires a 1000°C anneal step. The intensity of the PL lines depends on the cooling conditions. The spectrum consists of five peaks in the rapidly quenched sample as opposed to twenty one in the slowly cooled sample. Temperature dependent PL measurements and hydrostatic pressure measurements were performed to identify their nature.
dc.identifier.isbn1558998195
dc.identifier.urihttp://hdl.handle.net/1885/83691
dc.publisherMaterials Research Society
dc.relation.ispartofseriesMaterials Research Society Meeting Spring 2005
dc.sourceRare-Earth Doping for Optoelectronic Applications
dc.subjectKeywords: Photoluminescence (PL) bands; Single crystal silicon; Annealing; Chemical activation; Hafnium; Hydrostatic pressure; Photoluminescence; Single crystals; Silicon
dc.titleHafnium-related photoluminescence in single crystal silicon
dc.typeConference paper
local.bibliographicCitation.startpageV6.6
local.contributor.affiliationSachdeva, R, University of California
local.contributor.affiliationIstratov, A A, University of California
local.contributor.affiliationShan, Wei, OptiWork, Inc.
local.contributor.affiliationDeenapanray, Prakash, College of Engineering and Computer Science, ANU
local.contributor.affiliationWeber, E R, University of California
local.contributor.authoruidDeenapanray, Prakash, u4018937
local.description.notesImported from ARIES
local.description.refereedNo
local.identifier.absfor090699 - Electrical and Electronic Engineering not elsewhere classified
local.identifier.ariespublicationMigratedxPub11975
local.identifier.scopusID2-s2.0-30544431718
local.type.statusPublished Version

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