Hafnium-related photoluminescence in single crystal silicon

Abstract

A new photoluminescence (PL) band in the energy range of 700 meV to 950 meV associated with hafnium implanted in silicon is reported. A shift in the position of photoluminescence peaks observed on the samples implanted with two different isotopes of Hf confirms the Hf-related origin of the observed photoluminescence band. Activation of the Hf-optical centers requires a 1000°C anneal step. The intensity of the PL lines depends on the cooling conditions. The spectrum consists of five peaks in the rapidly quenched sample as opposed to twenty one in the slowly cooled sample. Temperature dependent PL measurements and hydrostatic pressure measurements were performed to identify their nature. Show more