Critical thickness for InAs quantum dot formation on (3 1 1)B InP substrates
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Caroff, Philippe
Bertru, N
Lu, W
Elias, G
Dehaese, O
Letoublon, A
Le Corre, A
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Elsevier
Abstract
We report on the critical thickness for InAs quantum dot (QD) formation on (3 1 1)B InP substrates. Firstly, critical thicknesses for InAs QD formation on InP surfaces have been measured by reflection high-energy electron diffraction. Large change of the
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Journal of Crystal Growth
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2037-12-31
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