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Critical thickness for InAs quantum dot formation on (3 1 1)B InP substrates

Date

Authors

Caroff, Philippe

Bertru, N

Lu, W

Elias, G

Dehaese, O

Letoublon, A

Le Corre, A

Publisher

Elsevier

Abstract

We report on the critical thickness for InAs quantum dot (QD) formation on (3 1 1)B InP substrates. Firstly, critical thicknesses for InAs QD formation on InP surfaces have been measured by reflection high-energy electron diffraction. Large change of the

Keywords

Keywords: A1. Reflection high-energy electron diffraction; A3. Molecular beam epitaxy; A3. Quantum dots; Capping layers; Critical thickness; Double-cap procedures; InAs; InAs quantum dots; Inp; InP substrates; Mass transports; Substrate temperatures; Crystal growth A1. Reflection high-energy electron diffraction; A3. Molecular beam epitaxy; A3. Quantum dots

URI

http://hdl.handle.net/1885/79888

Collections

ANU Research Publications

Source

Journal of Crystal Growth

Type

Journal article

DOI

10.1016/j.jcrysgro.2009.02.048

Restricted until

2037-12-31

Downloads

File

Description

01_Caroff_Critical_thickness_for_InAs_2009.pdf (199.82 KB)

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