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A brief review of doping issues in III-V semiconductors

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dc.contributor.authorJones, K S
dc.contributor.authorLind, A. G.
dc.contributor.authorHatem, C.
dc.contributor.authorMoffatt, S.
dc.contributor.authorRidgway, Mark C
dc.coverage.spatialToronto Canada
dc.date.accessioned2015-12-13T22:51:38Z
dc.date.createdMay 12-17 2013
dc.date.issued2013
dc.date.updated2016-02-24T09:45:41Z
dc.description.abstractA brief review of n-type doping of GaAs, InGaAs and InP using ion implantation is presented. While the diffusion of the amphoteric dopant Si is not a significant issue its activation is limited to around 1×10 19/cm3. This has prompted many studies into f
dc.identifier.isbn9781607683766
dc.identifier.urihttp://hdl.handle.net/1885/81173
dc.publisherConference Organising Committee
dc.relation.ispartofseriesInternational Symposium on Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 3 - 223rd ECS Meeting
dc.sourceECS Transactions
dc.subjectKeywords: Amphoteric dopants; Co-implantation; Dopant activation; Elevated temperature; II-IV semiconductors; Low energy implants; N-channel devices; Surface degradation; Integrated circuits; Ion implantation; Silicon; Site selection; Semiconductor doping
dc.titleA brief review of doping issues in III-V semiconductors
dc.typeConference paper
local.bibliographicCitation.lastpage105
local.bibliographicCitation.startpage97
local.contributor.affiliationJones, K S , University of Florida
local.contributor.affiliationLind, A. G., University of Florida
local.contributor.affiliationHatem, C., Applied Materials
local.contributor.affiliationMoffatt, S., Applied Materials
local.contributor.affiliationRidgway, Mark C, College of Physical and Mathematical Sciences, ANU
local.contributor.authoruidRidgway, Mark C, u9001886
local.description.embargo2037-12-31
local.description.notesImported from ARIES
local.description.refereedYes
local.identifier.absfor020406 - Surfaces and Structural Properties of Condensed Matter
local.identifier.absseo970102 - Expanding Knowledge in the Physical Sciences
local.identifier.ariespublicationf5625xPUB9526
local.identifier.doi10.1149/05303.0097ecst
local.identifier.scopusID2-s2.0-84885670202
local.type.statusPublished Version

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