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A brief review of doping issues in III-V semiconductors

Date

Authors

Jones, K S

Lind, A. G.

Hatem, C.

Moffatt, S.

Ridgway, Mark C

Publisher

Conference Organising Committee

Abstract

A brief review of n-type doping of GaAs, InGaAs and InP using ion implantation is presented. While the diffusion of the amphoteric dopant Si is not a significant issue its activation is limited to around 1×10 19/cm3. This has prompted many studies into f

Keywords

Keywords: Amphoteric dopants; Co-implantation; Dopant activation; Elevated temperature; II-IV semiconductors; Low energy implants; N-channel devices; Surface degradation; Integrated circuits; Ion implantation; Silicon; Site selection; Semiconductor doping

URI

http://hdl.handle.net/1885/81173

Collections

ANU Research Publications

Source

ECS Transactions

Type

Conference paper

DOI

10.1149/05303.0097ecst

Restricted until

2037-12-31

Downloads

File

Description

01_Jones_A_brief_review_of_doping_2013.pdf (745.02 KB)