Effects of annealing and substrate orientation on epitaxial growth of GaAs on Si

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dc.contributor.authorXu, H. Y.en_AU
dc.contributor.authorGuo, Y. N.en_AU
dc.contributor.authorWang, Y.en_AU
dc.contributor.authorZou, J.en_AU
dc.contributor.authorKang, J. H.en_AU
dc.contributor.authorGao, Q.en_AU
dc.contributor.authorJagadish, C.en_AU
dc.contributor.authorTan, Hark Hoeen_AU
dc.date.accessioned2015-10-23T03:44:04Z
dc.date.available2015-10-23T03:44:04Z
dc.date.issued2009-10-23
dc.date.updated2016-02-24T10:00:53Z
dc.description.abstractGaAsthin filmsgrown on Si (100) and (111) substrates by metal-organic chemical vapor deposition were investigated by electron microscopy. It was found that the growth rate of the GaAsepitaxial layers on Si (100) was faster than that on Si (111) due to a lower Si (111) surface energy. The morphologies and internal crystal structure quality of GaAsfilmsgrown on Si (111) were better than those grown on Si (100). It was also found that postannealing at high temperature can improve the morphology of the epitaxial layer surface and reduce lattice defects in the thin films.
dc.description.sponsorshipThe Australian Research Council is acknowledged for its financial support.en_AU
dc.identifier.issn0021-8979en_AU
dc.identifier.urihttp://hdl.handle.net/1885/16060
dc.publisherAmerican Institute of Physics (AIP)
dc.rightshttp://www.sherpa.ac.uk/romeo/issn/0021-8979..."Publishers version/PDF may be used on author's personal website, institutional website or institutional repository" from SHERPA/RoMEO site (as at 23/10/15). Copyright 2009 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Journal of Applied Physics and may be found at https://doi.org/10.1063/1.3248372
dc.sourceJournal of Applied Physics
dc.subjectKeywords: GaAs; GaAs films; GaAs on Si; GaAs thin films; High temperature; Lattice defects; Metalorganic chemical vapor deposition; Post annealing; Si (1 1 1); Si(1 0 0); Substrate orientation; Surface energies; Crystal structure; Deposition; Epitaxial films; Epita
dc.titleEffects of annealing and substrate orientation on epitaxial growth of GaAs on Si
dc.typeJournal article
local.bibliographicCitation.issue8en_AU
local.bibliographicCitation.lastpage4
local.bibliographicCitation.startpage083514en_AU
local.contributor.affiliationXu, Hongyi, University of Queensland, Australiaen_AU
local.contributor.affiliationGuo, Yanan, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National Universityen_AU
local.contributor.affiliationWang, Yong, University of Queensland, Australiaen_AU
local.contributor.affiliationZou, Jin, University of Queensland, Australiaen_AU
local.contributor.affiliationKang, Jung-Hyun, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National Universityen_AU
local.contributor.affiliationGao, Qiang, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National Universityen_AU
local.contributor.affiliationTan, Hoe Hark, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National Universityen_AU
local.contributor.affiliationJagadish, Chennupati, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National Universityen_AU
local.contributor.authoruidu4006742en_AU
local.description.notesImported from ARIESen_AU
local.identifier.absfor020406en_AU
local.identifier.absseo970102en_AU
local.identifier.ariespublicationU3488905xPUB2938en_AU
local.identifier.citationvolume106en_AU
local.identifier.doi10.1063/1.3248372en_AU
local.identifier.scopusID2-s2.0-70350716101
local.identifier.thomsonID000271358100036
local.publisher.urlhttps://www.aip.org/en_AU
local.type.statusPublished Versionen_AU

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