Effects of annealing and substrate orientation on epitaxial growth of GaAs on Si

Xu, H. Y.; Guo, Y. N.; Wang, Y.; Zou, J.; Kang, J. H.; Gao, Q.; Jagadish, C.; Tan, Hark Hoe

Effects of annealing and substrate orientation on epitaxial growth of GaAs on Si

Date

2009-10-23

Authors

Xu, H. Y.

Guo, Y. N.

Wang, Y.

Zou, J.

Kang, J. H.

Gao, Q.

Jagadish, C.

Tan, Hark Hoe

Publisher

American Institute of Physics (AIP)

Abstract

GaAsthin filmsgrown on Si (100) and (111) substrates by metal-organic chemical vapor deposition were investigated by electron microscopy. It was found that the growth rate of the GaAsepitaxial layers on Si (100) was faster than that on Si (111) due to a lower Si (111) surface energy. The morphologies and internal crystal structure quality of GaAsfilmsgrown on Si (111) were better than those grown on Si (100). It was also found that postannealing at high temperature can improve the morphology of the epitaxial layer surface and reduce lattice defects in the thin films.