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On Defects Created in 45 keV H - -Implanted n-type Cz Si: a Fluence Dependence and Isochronal Annealing Study

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dc.contributor.authorDeenapanray, Prakash
dc.date.accessioned2015-12-13T23:22:55Z
dc.date.available2015-12-13T23:22:55Z
dc.date.issued2001
dc.date.updated2015-12-12T09:13:07Z
dc.identifier.issn0921-4526
dc.identifier.urihttp://hdl.handle.net/1885/91670
dc.publisherElsevier
dc.sourcePhysica B
dc.titleOn Defects Created in 45 keV H - -Implanted n-type Cz Si: a Fluence Dependence and Isochronal Annealing Study
dc.typeJournal article
local.bibliographicCitation.lastpage192
local.bibliographicCitation.startpage190
local.contributor.affiliationDeenapanray, Prakash, College of Physical and Mathematical Sciences, ANU
local.contributor.authoruidDeenapanray, Prakash, u4018937
local.description.notesImported from ARIES
local.description.refereedYes
local.identifier.absfor020204 - Plasma Physics; Fusion Plasmas; Electrical Discharges
local.identifier.ariespublicationMigratedxPub22497
local.identifier.citationvolume308-310
local.type.statusPublished Version

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