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On Defects Created in 45 keV H - -Implanted n-type Cz Si: a Fluence Dependence and Isochronal Annealing Study
On Defects Created in 45 keV H - -Implanted n-type Cz Si: a Fluence Dependence and Isochronal Annealing Study
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Date
2001
Authors
Deenapanray, Prakash
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Elsevier
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http://hdl.handle.net/1885/91670
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ANU Research Publications
Source
Physica B
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Journal article
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