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Saturation of Photoluminescence Intensity from Si Nanocrystals Exposed to Atomic Hydrogen

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dc.contributor.authorCho, Hyun-Ji
dc.contributor.authorYoon, Jong-Hwan
dc.contributor.authorElliman, Robert
dc.contributor.authorWilkinson, Andrew
dc.date.accessioned2015-12-10T22:16:16Z
dc.date.available2015-12-10T22:16:16Z
dc.date.issued2009
dc.date.updated2016-02-24T10:00:50Z
dc.description.abstractSi nanocrystals embedded in silicon dioxide films are exposed to an atomic hydrogen plasma at different temperatures in the range from 100 °C to 350 °C. The photoluminescence (PL) from the nanocrystals is shown to increase in intensity with increasing e
dc.identifier.issn0374-4884
dc.identifier.urihttp://hdl.handle.net/1885/50862
dc.publisherHanguk Mulli Hakhoe
dc.sourceJournal of the Korean Physical Society
dc.subjectKeywords: Hydrogen passivation; Photoluminescence; Si nanocrystal
dc.titleSaturation of Photoluminescence Intensity from Si Nanocrystals Exposed to Atomic Hydrogen
dc.typeJournal article
local.bibliographicCitation.issue2
local.bibliographicCitation.lastpage739
local.bibliographicCitation.startpage736
local.contributor.affiliationCho, Hyun-Ji, Kangwon National University
local.contributor.affiliationYoon, Jong-Hwan, Kangwon National University
local.contributor.affiliationElliman, Robert, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationWilkinson, Andrew, College of Physical and Mathematical Sciences, ANU
local.contributor.authoruidElliman, Robert, u9012877
local.contributor.authoruidWilkinson, Andrew, u4004166
local.description.notesImported from ARIES
local.identifier.absfor020499 - Condensed Matter Physics not elsewhere classified
local.identifier.ariespublicationu3488905xPUB212
local.identifier.citationvolume54
local.identifier.doi10.3938/jkps.54.736
local.identifier.scopusID2-s2.0-62149097183
local.identifier.thomsonID000263371300033
local.type.statusPublished Version

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