Saturation of Photoluminescence Intensity from Si Nanocrystals Exposed to Atomic Hydrogen

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Cho, Hyun-Ji
Yoon, Jong-Hwan
Elliman, Robert
Wilkinson, Andrew

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Hanguk Mulli Hakhoe

Abstract

Si nanocrystals embedded in silicon dioxide films are exposed to an atomic hydrogen plasma at different temperatures in the range from 100 °C to 350 °C. The photoluminescence (PL) from the nanocrystals is shown to increase in intensity with increasing e

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Journal of the Korean Physical Society

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