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Influence of growth temperature and V/III ratio on Au-assisted In x Ga 1-x As nanowires

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dc.contributor.authorAmeruddin, Amiraen_AU
dc.contributor.authorFonseka, Arunien_AU
dc.contributor.authorGao, Qiangen_AU
dc.contributor.authorWong-Leung, Jenniferen_AU
dc.contributor.authorParkinson, Patricken_AU
dc.contributor.authorBreuer, Steffanen_AU
dc.contributor.authorJagadish, Chennupatien_AU
dc.contributor.authorTan, Hark Hoeen_AU
dc.coverage.spatialMelbourne Australia
dc.date.accessioned2015-12-10T22:56:21Z
dc.date.createdDecember 12-14 2012
dc.date.issued2012
dc.date.updated2016-02-24T10:19:32Z
dc.description.abstractInxGa1-xAs nanowires were grown using metal-organic chemical vapour deposition (MOCVD) with various growth temperatures and V/III ratios. The morphology of these nanowires and the composition distribution along the nanowire were studied as a function of these growth parameters. With higher growth temperature and lower V/III ratio, the tapering of the nanowires is reduced. However, the incorporation of Ga in the nanowires is also reduced with lower V/III ratio. The composition distribution along the nanowires is non-uniform with typically In-rich bases and Ga-rich tips.
dc.identifier.isbn9781467330459
dc.identifier.urihttp://hdl.handle.net/1885/60208
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE Inc)
dc.relation.ispartofseriesConference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2012)
dc.sourceCOMMAD 2012 Proceedings
dc.source.urihttp://commad2012.physics.unimelb.edu.au/
dc.subjectKeywords: Composition distributions; Growth parameters; Metal-organic chemical vapour depositions; Non-uniform; V/III ratio; Gallium; Growth temperature; Microelectronics; Organic chemicals; Nanowires
dc.titleInfluence of growth temperature and V/III ratio on Au-assisted In x Ga 1-x As nanowires
dc.typeConference paper
local.bibliographicCitation.lastpage38
local.bibliographicCitation.startpage37
local.contributor.affiliationAmeruddin, Amira, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationTan, Hoe Hark, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationFonseka, Aruni, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationGao, Qiang, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationWong-Leung, Yin-Yin (Jennifer), College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationParkinson, Patrick, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationBreuer, Steffan, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationJagadish, Chennupati, College of Physical and Mathematical Sciences, ANU
local.contributor.authoruidAmeruddin, Amira, u5070331
local.contributor.authoruidTan, Hoe Hark, u9302338
local.contributor.authoruidFonseka, Aruni, u4957496
local.contributor.authoruidGao, Qiang, u4006742
local.contributor.authoruidWong-Leung, Yin-Yin (Jennifer), u9607716
local.contributor.authoruidParkinson, Patrick, u4869537
local.contributor.authoruidBreuer, Steffan, u5074481
local.contributor.authoruidJagadish, Chennupati, u9212349
local.description.embargo2037-12-31
local.description.notesImported from ARIES
local.description.refereedYes
local.identifier.absfor100706 - Nanofabrication, Growth and Self Assembly
local.identifier.absfor020406 - Surfaces and Structural Properties of Condensed Matter
local.identifier.absseo970102 - Expanding Knowledge in the Physical Sciences
local.identifier.ariespublicationU3594520xPUB528
local.identifier.doi10.1109/COMMAD.2012.6472348
local.identifier.scopusID2-s2.0-84875618015
local.type.statusPublished Version

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