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Impurity-free disordering mechanisms in GaAs-based structures using doped spin-on silica layers

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dc.contributor.authorDeenapanray, Prakash N. Ken_AU
dc.contributor.authorGong, Binen_AU
dc.contributor.authorLamb, R. Nen_AU
dc.contributor.authorMartin, Aen_AU
dc.contributor.authorFu, Lanen_AU
dc.contributor.authorJagadish, C.en_AU
dc.contributor.authorTan, Hark Hoeen_AU
dc.date.accessioned2015-10-18T23:25:46Z
dc.date.available2015-10-18T23:25:46Z
dc.date.issued2002-06-10
dc.date.updated2016-02-24T09:48:26Z
dc.description.abstractWe have used photoluminescence,deep level transient spectroscopy and x-ray photoelectron spectroscopy to investigate the mechanisms of impurity-free disordering in GaAs-based structures using doped spin-on silica layers. We demonstrate that VGa is efficiently converted into arsenic-antisite, AsGa, related defects (EL2-type defects) when the GaAs layer is under compressive stress. We propose that the efficient formation of EL2-type defects reduces the efficiency of impurity-free interdiffusion of GaAs/AlGaAs quantum wells.
dc.description.sponsorshipTwo of the authors (P.N.K.D. and H.H.T.) gratefully acknowledge financial support by the Australian Research Council.en_AU
dc.identifier.issn0003-6951en_AU
dc.identifier.urihttp://hdl.handle.net/1885/15954
dc.publisherAmerican Institute of Physics (AIP)
dc.rightshttp://www.sherpa.ac.uk/romeo/issn/0003-6951..."Publishers version/PDF may be used on author's personal website, institutional website or institutional repository" from SHERPA/RoMEO site (as at 19/10/15). Copyright 2002 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters and may be found at https://doi.org/10.1063/1.1484244
dc.sourceApplied Physics Letters
dc.subjectKeywords: GaAs; GaAs-based structures; GaAs/AlGaAs quantum well; Impurity-free disordering; Silica layers; Spin-on; Arsenic; Deep level transient spectroscopy; Defects; Gallium arsenide; Semiconductor quantum wells; Silica; X ray photoelectron spectroscopy; Semicon
dc.titleImpurity-free disordering mechanisms in GaAs-based structures using doped spin-on silica layers
dc.typeJournal article
local.bibliographicCitation.issue23en_AU
local.bibliographicCitation.lastpage4353en_AU
local.bibliographicCitation.startpage4351en_AU
local.contributor.affiliationDeenapanray, Prakash, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National Universityen_AU
local.contributor.affiliationGong, Bin, University of New South Wales, Australiaen_AU
local.contributor.affiliationLamb, Robert Norman, University of New South Wales, Australiaen_AU
local.contributor.affiliationMartin, Anthony H, no formal affiliation, Australiaen_AU
local.contributor.affiliationFu, Lan, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National Universityen_AU
local.contributor.affiliationTan, Hoe Hark, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National Universityen_AU
local.contributor.affiliationJagadish, Chennupati, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National Universityen_AU
local.contributor.authoruidu4018937en_AU
local.description.notesImported from ARIESen_AU
local.description.refereedYes
local.identifier.absfor090699en_AU
local.identifier.absfor020501en_AU
local.identifier.ariespublicationMigratedxPub22494en_AU
local.identifier.citationvolume80en_AU
local.identifier.doi10.1063/1.1484244en_AU
local.identifier.scopusID2-s2.0-79956003212
local.publisher.urlhttps://www.aip.org/en_AU
local.type.statusPublished Versionen_AU

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