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The impact of silicon CCD photon spread on quantitative analyses of luminescence images

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Date

2014

Authors

Walters, Daniel
Fell, Andreas
Franklin, Evan
MacDonald, Daniel
Mitchell, Bernhard
Trupke, Thorsten

Journal Title

Journal ISSN

Volume Title

Publisher

IEEE Electron Devices Society

Abstract

Commercial and R&D photoluminescence imaging systems commonly employ indirect bandgap silicon charge-coupled device (CCD) imaging sensors. Silicon is a weak absorber of the near-infrared band-to-band emission of silicon, and significant lateral spreading

Description

Keywords

Citation

URI

http://hdl.handle.net/1885/77361

Collections

ANU Research Publications

Source

IEEE Journal of Photovoltaics

Type

Journal article

Book Title

Entity type

Access Statement

License Rights

DOI

10.1109/JPHOTOV.2013.2287912

Restricted until

2037-12-31

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01_Walters_The_impact_of_silicon_CCD_2014.pdf (648.14 KB)

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