The impact of silicon CCD photon spread on quantitative analyses of luminescence images
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Walters, Daniel
Fell, Andreas
Franklin, Evan
MacDonald, Daniel
Mitchell, Bernhard
Trupke, Thorsten
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IEEE Electron Devices Society
Abstract
Commercial and R&D photoluminescence imaging systems commonly employ indirect bandgap silicon charge-coupled device (CCD) imaging sensors. Silicon is a weak absorber of the near-infrared band-to-band emission of silicon, and significant lateral spreading
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IEEE Journal of Photovoltaics
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2037-12-31
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