Implications of laser-doping parameters and contact opening size on contact resistivity
| dc.contributor.author | Huyeng, Jonas | |
| dc.contributor.author | Ernst, Marco | |
| dc.contributor.author | Fong, Kean Chern | |
| dc.contributor.author | Walter, Daniel | |
| dc.contributor.author | Blakers, Andrew | |
| dc.coverage.spatial | Waikoloa Village, USA | |
| dc.date.accessioned | 2024-02-15T00:35:27Z | |
| dc.date.created | June 10-15 2018 | |
| dc.date.issued | 2018 | |
| dc.date.updated | 2022-10-02T07:19:39Z | |
| dc.description.abstract | Advanced silicon solar cells implement complex structures on both front and rear side. Laser processing has been shown to be a versatile and cost-effective technology for such applications. Local silicon doping or contact opening via ablation are two established process steps. In this work, we investigate their influence on the quality of local contacts with a focus on contact resistivity. We determine values for ρC down to 70 μΩ cm2 and 30 μΩ cm2 for phosphorus and boron respectively, on a simple test structure with the help of three-dimensional numerical simulations. | en_AU |
| dc.description.sponsorship | J.D.H acknowledges funding by the center of renewable energy of the University of Freiburg, within the interdisciplinary graduate school “DENE”. | en_AU |
| dc.format.mimetype | application/pdf | en_AU |
| dc.identifier.isbn | 9781538685297 | en_AU |
| dc.identifier.uri | http://hdl.handle.net/1885/313618 | |
| dc.language.iso | en_AU | en_AU |
| dc.publisher | IEEE | en_AU |
| dc.relation.ispartofseries | 7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018 | en_AU |
| dc.rights | © 2018 IEEE | en_AU |
| dc.source | 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC | en_AU |
| dc.subject | Contact opening | en_AU |
| dc.subject | contact resistivity | en_AU |
| dc.subject | laser ablation | en_AU |
| dc.subject | laser doping | en_AU |
| dc.subject | metallization | en_AU |
| dc.subject | silicon | en_AU |
| dc.title | Implications of laser-doping parameters and contact opening size on contact resistivity | en_AU |
| dc.type | Conference paper | en_AU |
| local.bibliographicCitation.lastpage | 1012 | en_AU |
| local.bibliographicCitation.startpage | 1008 | en_AU |
| local.contributor.affiliation | Huyeng, Jonas, Fraunhofer Institute for Solar Energy Systems | en_AU |
| local.contributor.affiliation | Ernst, Marco, College of Engineering and Computer Science, ANU | en_AU |
| local.contributor.affiliation | Fong, Kean, College of Engineering and Computer Science, ANU | en_AU |
| local.contributor.affiliation | Walter, Daniel, College of Engineering and Computer Science, ANU | en_AU |
| local.contributor.affiliation | Blakers, Andrew, College of Engineering and Computer Science, ANU | en_AU |
| local.contributor.authoruid | Ernst, Marco, u5457130 | en_AU |
| local.contributor.authoruid | Fong, Kean, u4448270 | en_AU |
| local.contributor.authoruid | Walter, Daniel, u4131215 | en_AU |
| local.contributor.authoruid | Blakers, Andrew, u9113453 | en_AU |
| local.description.embargo | 2099-12-31 | |
| local.description.notes | Imported from ARIES | en_AU |
| local.description.refereed | Yes | |
| local.identifier.absfor | 400808 - Photovoltaic power systems | en_AU |
| local.identifier.absseo | 170804 - Solar-photovoltaic energy | en_AU |
| local.identifier.ariespublication | u3102795xPUB212 | en_AU |
| local.identifier.doi | 10.1109/PVSC.2018.8547209 | en_AU |
| local.identifier.scopusID | 2-s2.0-85059883277 | |
| local.publisher.url | https://ieeexplore.ieee.org/ | en_AU |
| local.type.status | Published Version | en_AU |
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