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The Role of Oxygen on the Stability of Gettering of Metals to Cavities in Silicon

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Date

1999

Authors

Williams, James
Conway, Martin
Wong-Leung, Jennifer
Deenapanray, Prakash
Petravic, Mladen
Brown, Richard Alan
Eaglesham, D
Jacobson, D

Journal Title

Journal ISSN

Volume Title

Publisher

American Institute of Physics (AIP)

Abstract

The effect of oxygen implanted into epitaxial Si layers on the ability to getter Au to nanocavities, previously formed by H implantation and annealing, has been studied by Rutherford backscattering, transmission electron microscopy, and secondary ion mass spectrometry. We demonstrate that oxygen is gettered to cavities during extended annealing at 950 °C. Furthermore, the arrival of oxygen at cavities is not only shown to inhibit subsequent attempts to getter Au to cavities, but also to eject chemisorbed Au from the cavity walls. Similar behavior is observed in Czochralski Si, where the source of oxygen is within the Si itself.

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Citation

URI

http://hdl.handle.net/1885/93600

Collections

ANU Research Publications

Source

Applied Physics Letters

Type

Journal article

Book Title

Entity type

Access Statement

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DOI

Restricted until

2037-12-31

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