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Interpretation of anomalous temperature dependence of anti-Stokes photoluminescence at GaInP₂/GaAs interface

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dc.contributor.authorXu, S. J.
dc.contributor.authorLi, Q.
dc.contributor.authorDong, J.-R.
dc.contributor.authorChua, S. J.
dc.date.accessioned2015-10-02T01:48:26Z
dc.date.available2015-10-02T01:48:26Z
dc.date.issued2004
dc.description.abstractIn this letter, we report on temperature-dependent anti-Stokes photoluminescence (ASPL) at an interface between partially ordered GaInP₂ epilayer and GaAs substrate. It is found that the intensity of the ASPL depends strongly on temperature accompanying with a clear blueshift in energy. A localized-state luminescence model was employed to quantitatively interpret temperature dependence of the ASPL. Excellent agreement between the theory and experiment was obtained. Radiative recombination mechanism of the up-converted carriers was discussed.en_AU
dc.description.sponsorshipThe work was financially supported by the HK RGC Grants (No. HKU 7036/03P).en_AU
dc.identifier.issn0003-6951en_AU
dc.identifier.urihttp://hdl.handle.net/1885/15759
dc.publisherAmerican Institute of Physicsen_AU
dc.rightshttp://www.sherpa.ac.uk/romeo/issn/0003-6951..."Publishers version/PDF may be used on author's personal website, institutional website or institutional repository" from SHERPA/RoMEO site (as at 2/10/15). Copyright 2004 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters and may be found at https://doi.org/10.1063/1.1691496en_AU
dc.sourceApplied Physics Lettersen_AU
dc.titleInterpretation of anomalous temperature dependence of anti-Stokes photoluminescence at GaInP₂/GaAs interfaceen_AU
dc.typeJournal articleen_AU
dcterms.dateAccepted2004-02-04
local.bibliographicCitation.issue13en_AU
local.bibliographicCitation.startpage2280en_AU
local.contributor.affiliationXu, Shijie, University of Hong Kong, Hong Kongen_AU
local.contributor.affiliationLi, Qing, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National Universityen_AU
local.contributor.affiliationDong, Jianrong, Institute of Materials Research and Engineering, Singaporeen_AU
local.contributor.affiliationChua, S J, Institute of Materials Research and Engineering, Singaporeen_AU
local.contributor.authoruidu4367518en_AU
local.description.notesImported from ARIESen_AU
local.identifier.absfor020501en_AU
local.identifier.ariespublicationu4367518xPUB10en_AU
local.identifier.citationvolume84en_AU
local.identifier.doi10.1063/1.1691496en_AU
local.publisher.urlhttps://www.aip.org/en_AU
local.type.statusPublished Versionen_AU

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