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Interpretation of anomalous temperature dependence of anti-Stokes photoluminescence at GaInP₂/GaAs interface

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Date

2004

Authors

Xu, S. J.
Li, Q.
Dong, J.-R.
Chua, S. J.

Journal Title

Journal ISSN

Volume Title

Publisher

American Institute of Physics

Abstract

In this letter, we report on temperature-dependent anti-Stokes photoluminescence (ASPL) at an interface between partially ordered GaInP₂ epilayer and GaAs substrate. It is found that the intensity of the ASPL depends strongly on temperature accompanying with a clear blueshift in energy. A localized-state luminescence model was employed to quantitatively interpret temperature dependence of the ASPL. Excellent agreement between the theory and experiment was obtained. Radiative recombination mechanism of the up-converted carriers was discussed.

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Citation

URI

http://hdl.handle.net/1885/15759

Collections

ANU Research Publications

Source

Applied Physics Letters

Type

Journal article

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DOI

10.1063/1.1691496

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