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Effect of Ion Species on Implantation-produced Disorder in GaN at Liquid Nitrogen Temperature

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dc.contributor.authorKucheyev, Sergei
dc.contributor.authorWilliams, James
dc.contributor.authorZou, Jin
dc.contributor.authorLi, Gang
dc.contributor.authorJagadish, Chennupati
dc.contributor.authorTitov, A I
dc.date.accessioned2015-12-13T22:19:40Z
dc.date.issued2002
dc.date.updated2015-12-11T07:49:23Z
dc.description.abstractThe effect of ion species on the damage buildup behavior in wurtzite GaN under bombardment at liquid nitrogen temperature (LN2) is studied by a combination of Rutherford backscattering/channeling spectrometry and transmission electron microscopy. Results
dc.identifier.issn0168-583X
dc.identifier.urihttp://hdl.handle.net/1885/71934
dc.publisherElsevier
dc.sourceNuclear Instruments and Methods in Physics Research: Section B
dc.subjectKeywords: Crystal defects; Gallium compounds; Ion bombardment; Rutherford backscattering spectroscopy; Thermal effects; Transmission electron microscopy; Channeling spectrometry; Ion implantation Collision cascade; Defects; GaN; Ion implantation
dc.titleEffect of Ion Species on Implantation-produced Disorder in GaN at Liquid Nitrogen Temperature
dc.typeJournal article
local.bibliographicCitation.lastpage786
local.bibliographicCitation.startpage782
local.contributor.affiliationKucheyev, Sergei, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationWilliams, James, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationZou, Jin, University of Queensland
local.contributor.affiliationLi, Gang, ShenZhen Fangda GuoKe Optronics Technical Co Ltd
local.contributor.affiliationJagadish, Chennupati, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationTitov, A I, St Petersburg State Technical University
local.contributor.authoruidKucheyev, Sergei, u9910365
local.contributor.authoruidWilliams, James, u8809701
local.contributor.authoruidJagadish, Chennupati, u9212349
local.description.embargo2037-12-31
local.description.notesImported from ARIES
local.description.refereedYes
local.identifier.absfor090699 - Electrical and Electronic Engineering not elsewhere classified
local.identifier.ariespublicationMigratedxPub2960
local.identifier.citationvolume190
local.identifier.doi10.1016/S0168-583X(01)01309-X
local.identifier.scopusID2-s2.0-0036568868
local.type.statusPublished Version

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